Mobility in semiconducting graphene nanoribbons: Phonon, impurity, and edge roughness scattering

2008/07/01 by Fang Tian, Tian Fang, Aniruddha Konar +3 · 2 citations
Materials Science · Physics and Astronomy · #Graphene research and applications #Surface and Thin Film Phenomena #Thermal properties of materials #cond-mat.mtrl-sci

paper · pdf · doi:10.1103/physrevb.78.205403

7 pages, 7 figures

arxiv created 2008/07/01 · openalex publication_date 2008/11/04 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

The transport properties of carriers in semiconducting graphene nanoribbons are studied by comparing the effects of phonon, impurity, and line-edge roughness scattering. It is found that scattering from impurities located at the surface of nanoribbons and from acoustic phonons are as important as line-edge roughness scattering. The relative importance of these scattering mechanisms varies with the temperature, Fermi-level location, and the width of the ribbons. Based on the analysis, strategies for improvement of low-field mobility are described.

Citations

• Dielectric function, screening, and plasmons in two-dimensional graphene
• Simulation of Graphene Nanoribbon Field-Effect Transistors

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• Field-enhanced electron mobility by nonlinear phonon scattering of Dirac electrons in semiconducting graphene nanoribbons