2007/04/30 by G. Fiori, Gianluca Fiori, Giuseppe Iannaccone +1 · 2 citations
Engineering · Materials Science · Physics and Astronomy · #Carbon Nanotubes in Composites #Graphene research and applications #Nanowire Synthesis and Applications #cond-mat.mes-hall
paper · pdf · doi:10.1109/led.2007.901680
published as IEEE Electron Device Letters, Vol. 28, Issue 8, pp. 760 - 762, 2007
openalex publication_date 2007/08/01 · arxiv created 2008/01/07 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We present an atomistic 3-D simulation of graphene nanoribbon field-effect transistors (GNR-FETs), based on the self consistent solution of the 3-D Poisson and Schrodinger equations with open boundary conditions within the nonequilibrium Green's function formalism and a tight-binding Hamiltonian. With respect to carbon nanotube FETs, GNR-FETs exhibit comparable performance, reduced sensitivity to the variability of channel chirality, and similar leakage problems due to band-to-band tunneling. Acceptable transistor performance requires prohibitive effective nanoribbon width of 1-2 nm and atomistic precision that could in principle be obtained with periodic etch patterns or stress patterns.