2008/03/25 by Yanxia Xing, Qing‐Feng Sun, Qing-feng Sun +1 · 2 citations
Physics and Astronomy · #Condensed matter physics #Dephasing #Electron #Hall effect #Landau quantization #Magnetic field #Magnetic properties of thin films #Mesoscopic physics #Physics #Physics of Superconductivity and Magnetism #Quantum Hall effect #Quantum and electron transport phenomena #Quantum mechanics #Quantum spin Hall effect #Spin (aerodynamics) #Spin Hall effect #Spin polarization #Thermal Hall effect #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.77.115346
published as Phys. Rev. B 77, 115346 (2008) · 7 pages, 5 figures
openalex publication_date 2008/03/25 · arxiv created 2008/06/13 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We study the influence of the phase relaxation process on Hall resistance and spin Hall current of a mesoscopic two-dimensional four-terminal Hall cross bar with or without Rashba spin-orbit interaction (SOI) in a perpendicular uniform magnetic field. We find that the plateaus of the Hall resistance with even number of edge states can survive for very strong phase relaxation when the system size is much longer than the phase coherence length. On the other hand, the odd integer Hall resistance plateaus arising from the SOI are easily destroyed by the weak phase relaxation during the competition between the magnetic field and the SOI which delocalize the edge states. In addition, we have also studied the transverse spin Hall current and found that it exhibits resonant behavior whenever the Fermi level crosses the Landau band of the system. The phase relaxation process weakens the resonant spin Hall current and enhances the nonresonant spin Hall current.