2008/03/10 by Diptiman Sen, Amit Agarwal · 19 citations
Computer Science · Engineering · Mathematics · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Bent molecular geometry #Condensed matter physics #Conductance #Dissipation #Electron #Exponent #Fractional quantum Hall effect #Geometry #Line (geometry) #Materials science #Mathematics #Physics #Quantum #Quantum Hall effect #Quantum Information and Cryptography #Quantum and electron transport phenomena #Quantum mechanics #Quantum spin Hall effect #Quantum tunnelling #Renormalization group #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.78.085430
published in Physical Review B 78(8) (American Physical Society) · 9 pages including 4 figures
arxiv created 2008/03/10 · openalex publication_date 2008/08/25 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We present a microscopic model for a line junction formed by counter or copropagating single mode quantum Hall edges corresponding to different filling factors. The ends of the line junction can be described by two possible current splitting matrices which are dictated by the conditions of both lack of dissipation and the existence of a linear relation between the bosonic fields. Tunneling between the two edges of the line junction then leads to a microscopic understanding of a phenomenological description of line junctions introduced some time ago. The effect of density-density interactions between the two edges is considered, and renormalization-group ideas are used to study how the tunneling parameter changes with the length scale. This leads to a power-law variation of the conductance of the line junction with the temperature. Depending on the strength of the interactions the line junction can exhibit two quite different behaviors. Our results can be tested in bent quantum Hall systems fabricated recently.