Strongly Correlated Fractional Quantum Hall Line Junctions

2002/10/31 by U. Zülicke, U. Zuelicke, Efrat Shimshoni +1
Engineering · Materials Science · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Graphene research and applications #Quantum and electron transport phenomena #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevlett.90.026802

published as Phys. Rev. Lett. 90, 026802 (2003) · 4 pages, 1 figure, RevTex4, typos corrected + references added, to appear in Phys. Rev. Lett

arxiv created 2003/01/13 · openalex publication_date 2003/01/16 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We have studied a clean finite-length line junction between interacting counterpropagating single-branch fractional quantum Hall edge channels. Exact solutions for low-lying excitations and transport properties are obtained when the two edges belong to quantum Hall systems with different filling factors and interact via the long-range Coulomb interaction. Charging effects due to the coupling to external edge-channel leads are fully taken into account. Conductances and power laws in the current-voltage characteristics of tunneling are strongly affected by interedge correlations.

Citations

• A dynamic scattering approach for a gated interacting wire
• Tunneling gap of laterally separated quantum Hall systems
• Universality of Transport Properties in Equilibrium, the Goldstone Theorem, and Chiral Anomaly
• Plasmon modes and correlation functions in quantum wires and Hall bars
• Quantum Hall bilayers and the chiral sine-Gordon equation
• Mesoscopic effects in tunneling between parallel quantum wires
• Exactly Soluble Model for Umklapp Scattering at Quantum Hall Edges