2007/11/30 by Bing Huang, Qimin Yan, Gang Zhou +4 · 1 citation
Engineering · Materials Science · Physics and Astronomy · #Graphene research and applications #Molecular Junctions and Nanostructures #Quantum and electron transport phenomena #cond-mat.mtrl-sci
paper · pdf · doi:10.1063/1.2826547
published as Applied Physics Letters 91, 253122, 2007 · 4 pages, 3 figures. Accepted in APL
arxiv created 2007/12/01 · openalex publication_date 2007/12/17 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Using first-principles electronic structure calculations, we show a metal-semiconductor transition of a metallic graphene nanoribbon with zigzag edges induced by substitutional doping of nitrogen or boron atoms at the edges. A field effect transistor consisting of a metal-semiconductor-metal junction can then be constructed by selective doping of the ribbon edges. The current-voltage characteristics of such a prototype device is determined by the first-principles quantum transport calculations.