2007/08/28 by Tomofumi Susaki, T. Susaki, Y. Kozuka +4 · 53 citations
Chemistry · Engineering · Materials Science · Physics and Astronomy · #Chemistry #Condensed matter physics #Dielectric #Electronic and Structural Properties of Oxides #Ferroelectric and Negative Capacitance Devices #Ferroelectric and Piezoelectric Materials #Materials science #Optoelectronics #Permittivity #Physics #Polarity (international relations) #Quantum tunnelling #Schottky barrier #cond-mat.mtrl-sci #cond-mat.str-el
paper · pdf · doi:10.1103/physrevb.76.155110
published in Physical Review B 76(15) (American Physical Society)
arxiv created 2007/08/28 · openalex publication_date 2007/10/17 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We have observed temperature-dependent reversal of the rectifying polarity in Au∕Nb:SrTiO3 Schottky junctions. By simulating current-voltage characteristics, we have found that the permittivity of SrTiO3 near the interface exhibits temperature dependence opposite to that observed in the bulk, significantly reducing the barrier width. At low temperature, tunneling current dominates the junction transport due both to such barrier narrowing and to suppressed thermal excitations. The present results demonstrate that junction properties can be dominated by the interface permittivity.