2007/08/27 by I. S. Lyubinskiy, Ilya Lyubinskiy
Engineering · Physics and Astronomy · #Atomic physics #Condensed matter physics #Electron #Hyperfine structure #Impurity #Magnetic field #Paramagnetism #Physics #Quantum and electron transport phenomena #Quantum mechanics #Relaxation (psychology) #Semiconductor #Semiconductor Quantum Structures and Devices #Semiconductor materials and devices #Solid-state physics #Spin (aerodynamics) #Spin polarization #Spin–lattice relaxation #Zero field splitting #cond-mat.mes-hall
paper · pdf · doi:10.1134/s0021364008240089
arxiv created 2007/08/27 · openalex publication_date 2008/02/01 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
Spin relaxation in the impurity band of a 2D semiconductor with spin-split spectrum and hyperfine interaction in the external magnetic field is considered. Two contributions to the spin relaxation are shown to be relevant: the one given by optimal impurity configurations with the hop-waiting time inversely proportional to the external magnetic field and another one related to electron motion over large distances. The average spin relaxation rate is calculated.