2007/07/02 by Sanjay K. Ram, Md. Nazrul Islam, Md. N. Islam +3
Chemistry · Engineering · Materials Science · Physics and Astronomy · #Analytical Chemistry (journal) #Chemistry #Chromatography #Composite material #Crystallite #Ellipsometry #Materials science #Metallurgy #Microstructure #Nanocrystalline material #Nanotechnology #Optics #Optoelectronics #Phase (matter) #Raman scattering #Raman spectroscopy #Silicon #Silicon Nanostructures and Photoluminescence #Silicon and Solar Cell Technologies #Thin film #Thin-Film Transistor Technologies #cond-mat.mtrl-sci
paper · pdf · doi:10.1016/j.tsf.2007.12.113
5 pages, 4 figures, 1 table
arxiv created 2007/07/02 · openalex publication_date 2007/12/28 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
Single phase nano and micro crystalline silicon films deposited using SiF4/H2 plasma at different H2 dilution levels were studied at initial and terminal stages of film growth with spectroscopic ellipsometry (SE), Raman scattering (RS) and atomic force microscopy (AFM). The analysis of data obtained from SE elucidates the microstructural evolution with film growth in terms of the changes in crystallite sizes and their volume fractions, crystallite conglomeration and film morphology. The effect of H2 dilution on film microstructure and morphology, and the corroborative findings from AFM studies are discussed. Our SE results evince two distinct mean sizes of crystallites in the material after a certain stage of film growth. The analysis of Raman scattering data for such films has been done using a bimodal size distribution of crystallite grains, which yields more accurate and physically rational microstructural picture of the material.