2006/06/28 by Federico Foieri, F. Foieri, M. J. Sanchez +5
Engineering · Materials Science · Physics and Astronomy · #Graphene research and applications #Molecular Junctions and Nanostructures #Quantum and electron transport phenomena #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.74.165313
9 pages, 7 figures, Submitted to PRB
arxiv created 2006/06/28 · openalex publication_date 2006/10/11 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
We calculate the distribution of the conductance G in a one-dimensional disordered wire at finite temperature T and bias voltage V in an independent-electron picture and assuming full coherent transport. At high enough temperature and bias voltage, where several resonances of the system contribute to the conductance, the distribution P(G(T,V)) can be represented with good accuracy by autoconvolutions of the distribution of the conductance at zero temperature and zero bias voltage. The number of convolutions depends on T and V. In the regime of very low T and V, where only one resonance is relevant to G(T,V), the conductance distribution is analyzed by a resonant tunneling conductance model. Strong effects of finite T and V on the conductance distribution are observed and well described by our theoretical analysis, as we verify by performing a number of numerical simulations of a one-dimensional disordered wire at different temperatures, voltages, and lengths of the wire. Analytical estimates for the first moments of P(G(T,V)) at high temperature and bias voltage are also provided.