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Coherent “Metallic” Resistance and Medium Localization in a Disordered One-Dimensional Insulator

2002/11/30 by Martin Mosko, Martin Moško, Pavel Vagner +3 · 1 citation
Engineering · Materials Science · Physics and Astronomy · #Advanced Memory and Neural Computing #Graphene research and applications #Quantum and electron transport phenomena #cond-mat.dis-nn #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevlett.91.136803

4 pages, 4 figures, RevTeX4

arxiv created 2003/07/01 · openalex publication_date 2003/09/26 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

It is believed that a disordered one-dimensional (1D) wire with coherent electronic conduction is an insulator with the mean resistance ⟨\ensuremathρ⟩\ensuremath≃e^2L/\ensuremathξ and resistance dispersion \ensuremathΔ_\ensuremathρ\ensuremath≃e^L/\ensuremathξ, where L is the wire length and \ensuremathξ is the electron localization length. Here we show that this 1D insulator undergoes at full coherence the crossover to a 1D ``metal,'' caused by thermal smearing and resonant tunneling. As a result, \ensuremathΔ_\ensuremathρ is smaller than unity and tends to be L/\ensuremathξ independent, while ⟨\ensuremathρ⟩ grows with L/\ensuremathξ first nearly linearly and then polynomially, manifesting the so-called medium localization.

Citations

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