Conductance quantization in etchedSi∕SiGequantum point contacts

2005/12/31 by G. Scappucci, Giordano Scappucci, L. Di Gaspare +4 · 1 citation
Engineering · Mathematics · Physics and Astronomy · #Adiabatic process #Advancements in Semiconductor Devices and Circuit Design #Algorithm #Condensed matter physics #Conductance #Degenerate energy levels #Heterojunction #Mathematics #Physics #Quantization (signal processing) #Quantum and electron transport phenomena #Quantum mechanics #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevb.74.035321

to appear in Physical Review B

arxiv created 2006/06/21 · openalex publication_date 2006/07/18 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

We fabricated strongly confined Schottky-gated quantum point contacts by etching Si∕SiGe heterostructures and observed intriguing conductance quantization in units of approximately 1e²∕h. Nonlinear conductance measurements were performed depleting the quantum point contacts at fixed mode-energy separation. We report evidence of the formation of a half 1e²∕h plateau, supporting the speculation that adiabatic transmission occurs through one-dimensional modes with complete removal of valley and spin degeneracies.

Citations

• Fabrication and characterization of electrostatic Si∕SiGe quantum dots with an integrated read-out channel
• Spin properties of low-density one-dimensional wires
• Coherent Manipulation of Coupled Electron Spins in Semiconductor Quantum Dots
• Local Moment Formation in Quantum Point Contacts
• Single-shot read-out of an individual electron spin in a quantum dot

Cited by

• Valley Subband Splitting in Bilayer Graphene Quantum Point Contacts