Electronic Raman scattering in quantum dots revisited

2005/05/26 by Alain Delgado, Augusto Gonzalez, Augusto González +2
Materials Science · Physics and Astronomy · #Quantum Dots Synthesis And Properties #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall

paper · pdf · doi:10.1016/j.ssc.2005.04.042

published as Solid State Commun. 135 (2005) 554 -562 · To appear in a special issue of Solid State Communications dedicated to Eli Burstein

arxiv created 2005/05/26 · openalex publication_date 2005/05/27 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We present theoretical results concerning inelastic light (Raman) scattering from semiconductor quantum dots. The characteristics of each dot state (whether it is a collective or single-particle excitation, its multipolarity, and its spin) are determined independently of the Raman spectrum, in such a way that common beliefs used for level assignments in experimental spectra can be tested. We explore the usefulness of below band gap excitation and an external magnetic field to identify charge and spin excited states of a collective or single-particle nature.

Citations

• Selection and jump rules in electronic Raman scattering fromGaAs∕AlxGa1−xAsartificial atoms
• Resonant Raman scattering by charge-density and single-particle excitations in semiconductor nanostructures: A generalized interband-resonant random-phase-approximation theory
• Wave-vector dependence of spin and density multipole excitations in quantum dots
• The Raman effect in crystals