Spin Noise Spectroscopy in GaAs

2005/05/20 by M. Oestreich, Michael Römer, M. Roemer +3 · 12 citations
Physics and Astronomy · #Magnetic properties of thin films #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.other

paper · pdf · doi:10.1103/physrevlett.95.216603

published as Phys. Rev. Lett. 95, 216603 (2005) · 4 pages, 4 figures

arxiv created 2005/05/20 · openalex publication_date 2005/11/17 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/04

Abstract

We observe the noise spectrum of electron spins in bulk GaAs by Faraday-rotation noise spectroscopy. The experimental technique enables the undisturbed measurement of the electron-spin dynamics in semiconductors. We measure exemplarily the electron-spin relaxation time and the electron Landé g factor in -doped GaAs at low temperatures and find good agreement of the measured noise spectrum with a theory based on Poisson distribution probability.

Citations

• Single-shot read-out of an individual electron spin in a quantum dot

Cited by

• Spin noise of itinerant fermions
• Efficient data averaging for spin noise spectroscopy in semiconductors
• Relaxation mechanism for electron spin in the impurity band ofn-doped semiconductors
• The effect of spin transport on spin lifetime in nanoscale systems
• Coherent optical control of correlation waves of spins in semiconductors
• Charge and spin diffusion on the metallic side of the metal-insulator transition: A self-consistent approach
• Squeezed-light spin noise spectroscopy
• Higher-order spin noise statistics
• Raman scattering model of the spin noise
• Fundamental limits for nondestructive measurement of a single spin by Faraday rotation
• Sensitivity, quantum limits, and quantum enhancement of noise spectroscopies
• Hybrid spin noise spectroscopy and the spin Hall effect