2005/04/27 by A. Łusakowski, A. Lusakowski · 9 citations
Chemistry · Engineering · Materials Science · Physics and Astronomy · #Advanced Semiconductor Detectors and Materials #Computer science #Inorganic Chemistry and Materials #Luminescence Properties of Advanced Materials #Physics #cond-mat.other
paper · pdf · doi:10.1103/physrevb.72.094429
published in Physical Review B 72(9) (American Physical Society) · 8 pages, 4 figures
arxiv created 2005/04/27 · openalex publication_date 2005/09/23 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We propose a mechanism leading to ground state splitting for rare earth 8S ions in semiconductor crystals. The resulting splitting is due to three effects; the first is the intra-atomic 4f\text\ensuremath-5d spin-spin interaction, the second one is the spin-orbit interaction for 5d electrons, and the third one is their hybridization with the valence band states of the semiconductor host. The resulting splitting depends significantly on the position of the 5d level with respect to the semiconductor host band structure. We also discuss a different model, already known in the literature, which is also based on the ion--band state hybridization. For both models, as an example, we present results of numerical calculations for rare earth ions in the IV-VI semiconductor PbTe.