2000/11/08 by J. Blinowski, P. Kacman · 2 citations
Materials Science · Physics and Astronomy · #Antiferromagnetism #Band gap #Condensed matter physics #Coupling (piping) #Electron #Electronic band structure #Exchange interaction #Ferromagnetism #Magnetic properties of thin films #Magnetic semiconductor #Materials science #Optoelectronics #Physics #Quantum and electron transport phenomena #Semiconductor #Superlattice #Valence band #ZnO doping and properties #cond-mat
paper · pdf · doi:10.1103/physrevb.64.045302
8 pages, 6 figures, to be submitted to Phys.Rev.B
arxiv created 2000/11/08 · openalex publication_date 2001/06/13 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
The interlayer exchange coupling mediated by valence-band electrons in all-semiconductor IV-VI magnetic/nonmagnetic superlattices is studied theoretically. A three-dimensional tight-binding model, accounting for the band and magnetic structure of the constituent superlattice components is used to calculate the spin-dependent part of the total electronic energy. The antiferromagnetic coupling between ferromagnetic layers in EuS/PbS superlattices is obtained, in agreement with the experimental evidences. The results obtained for the coupling between antiferromagnetic layers in EuTe/PbTe superlattices are also presented.