2005/01/31 by C. H. Li, Γ. Κιοσέογλου, G. Kioseoglou +11
Chemistry · Engineering · Physics and Astronomy · #Chemistry #Condensed matter physics #Diode #Electroluminescence #Electron #Materials science #Nanotechnology #Optoelectronics #Physics #Polarization (electrochemistry) #Quantum and electron transport phenomena #Quantum dot #Schottky barrier #Schottky diode #Semiconductor #Semiconductor Quantum Structures and Devices #Semiconductor materials and devices #Spin (aerodynamics) #Spin polarization #cond-mat.mtrl-sci
paper · pdf · doi:10.1063/1.1890469
4 figures, accepted by Appl. Phys. Lett
arxiv created 2005/01/31 · openalex publication_date 2005/03/22 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We report on electrical control of the spin polarization of InAs∕GaAs self-assembled quantum dots (QDs) at room temperature. This is achieved by electrical injection of spin-polarized electrons from an Fe Schottky contact. The circular polarization of the QD electroluminescence shows that a 5% electron spin polarization is obtained in the InAs QDs at 300K, which is remarkably insensitive to temperature. This is attributed to suppression of the spin-relaxation mechanisms in the QDs due to reduced dimensionality. These results demonstrate that practical regimes of spin-based operation are clearly attainable in solid-state semiconductor devices.