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Results of a Si/CdTe Compton telescope

2005/08/18 by Kousuke Oonuki, Takaaki Tanaka, Shin Watanabe +10
Engineering · Physics and Astronomy · #Advanced Semiconductor Detectors and Materials #Advanced X-ray and CT Imaging #Radiation Detection and Scintillator Technologies #astro-ph

paper · pdf · doi:10.1117/12.621809

11 pages, 13 figures, presented at SPIE conference HARD X-RAY AND GAMMA-RAY DETECTOR PHYSICS VII", San Diego, 2005. To be published in Proc. SPIE 2005

openalex publication_date 2005/08/18 · arxiv created 2005/09/21 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/29

Abstract

We have been developed Si/CdTe semiconductor Compton telescope to explore the universe in the energy band from several 10 keV to a few MeV. In our Si/CdTe Compton telescope, a stacked thin CdTe pixel detector is a key component to achieve higher detection effciency for MeV gamma-rays maintaining high energy resolution. In this paper, results from a prototype stacked CdTe pixel detector are reported, which consists of three layers of CdTe pixel detectors and one CdTe pixel detector at their side. With this prototype detector, we succeeded in Compton reconstruction of images and spectra in the energy band from 122 keV to 662 keV. The energy resolution (FWHM) of reconstructed spectra is 7.3 keV at 511 keV and 3.1 keV at 122 keV, respectively.

Citations