A Si/CdTe semiconductor Compton camera

2005/10/01 by S. Watanabe, Shin Watanabe, T. Tanaka +18 · 1 citation
Engineering · Physics and Astronomy · #Advanced Semiconductor Detectors and Materials #Advanced X-ray and CT Imaging #Radiation Detection and Scintillator Technologies

paper · doi:10.1109/tns.2005.856995

crossref issued 2005/10/01 · crossref published 2005/10/01 · crossref published-print 2005/10/01 · openalex publication_date 2005/10/01 · crossref created 2005/12/10 · crossref deposited 2022/01/12 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/22 · crossref indexed 2026/07/30

Abstract

We are developing a Compton camera based on Si and CdTe semiconductor imaging devices with high energy resolution. In this paper, results from the most recent prototype are reported. The Compton camera consists of six layered double-sided Si Strip detectors and CdTe pixel detectors, which are read out with low noise analog ASICs, VA32TAs. We obtained Compton reconstructed images and spectra of line gamma-rays from 122 keV to 662 keV. The energy resolution is 9.1 keV and 14 keV at 356 keV and 511 keV, respectively.

Cited by

• Metal Halide Perovskite Semiconductor Devices for High-Energy Radiation Detection: Recent Progress and Applications
• Results of a Si/CdTe Compton telescope

Related

• Development of a Compton Imager Setup
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• Single Photon X-Ray Imaging with Si- and CdTe-Sensors
• The Compton Spectrometer and Imager Project for MeV Astronomy
• Simulated performance of a position sensitive radiation detecting system (COCAE)