Spin susceptibility of two-dimensional hole gases in GaAs/AlGaAs heterostructures

2004/09/21 by Mukesh Kumar, M. Kumar, Giorgio Mori +4
Physics and Astronomy · #Physics of Superconductivity and Magnetism #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall

paper · pdf · doi:10.1016/j.ssc.2005.03.061

arxiv created 2004/09/21 · openalex publication_date 2005/04/14 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

We report measurements of spin susceptibility of a two-dimensional hole gas confined at an GaAs/AlGaAs interface in density range from 2.8 x 10¹0 to 6.5 x 10¹0 cm-2. We used the method of spin polarization of carriers in parallel magnetic field. We observed an enhancement of the spin susceptibility over the bulk value that increases as the density is decreased in qualitative agreement with Quantum Monte Carlo calculations. The measured enhancement factor increases from 2.8 to 4.8 as the hole density is decreased.

Citations

• Spin-polarization transition in the two-dimensional electron gas
• On the Interaction of Electrons in Metals
• Spin Susceptibility of an Ultra-Low-Density Two-Dimensional Electron System
• Indication of the Ferromagnetic Instability in a Dilute Two-Dimensional Electron System