2023/07/13 by Kazuki Arima, Seiji Nakashima, Koji Kimura +4 · 1 citation
Chemistry · Earth and Planetary Sciences · Materials Science · #Bismuth ferrite #Chemistry #Condensed matter physics #Conductivity #Dielectric #Dopant #Doping #Ferroelectric and Piezoelectric Materials #Ferroelectricity #Geophysical and Geoelectrical Methods #Materials science #Multiferroics #Multiferroics and related materials #Nanotechnology #Optoelectronics #Physical chemistry #Physics #Thin film
paper · pdf · doi:10.35848/1347-4065/ace728
openalex publication_date 2023/07/13 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/13
Abstract Bismuth ferrite (BiFeO 3 : BFO) is a multiferroic material that exhibits ferroelectricity, antiferromagnetism, and ferroelasticity simultaneously at RT. BFO holds great promise as a ferroelectric semiconductor because of its ability to alter conductivity by reversing its spontaneous polarization. Moreover, BFO thin films doped with transition metals such as Mn or V can modulate their conductivity. Nevertheless, the mechanism of this conductivity change remains unclear because the effects of dopants on the local atomic structure of BFO are not fully understood. In this study, we investigated the local atomic structure around the Fe site in a V-doped BFO thin film by X-ray fluorescence holography. Reconstructed atomic structures from the Fe K α hologram patterns revealed that the atomic structure stability of the V-doped BFO thin film differs from that of previously reported Mn-doped BFO thin films. The results provide important insights into the mechanism of controlling the conductivity of BFO thin films by dopants.