2013/01/31 by Hong‐Jian Feng, Feng, Hong-Jian
Materials Science · Physics and Astronomy · #FOS: Physical sciences #Magnetic Properties and Applications #Magnetic properties of thin films #Materials Science (cond-mat.mtrl-sci) #Multiferroics and related materials
paper · pdf · doi:10.48550/arxiv.1301.7559
openalex publication_date 2013/01/31 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
First-principles density-functional theory calculations show switching magnetization by 90 degree can be achieved in ultrathin BFO film by applying external electric-field. Up-spin carriers appear to the surface with positive field while down-spin ones to the negative field surface, arising from the redistribution of Fe-t2g orbital. The half-metallic behavior of Fe-3d states in the surface of R phase film makes it a promising candidate for AFM/FM bilayer heterostructure possessing electric-field tunable FM magnetization reversal and opens a new way towards designing spintronic multiferroics. The interface exchange-bias effect in this BFO/FM bilayer is mainly driven by the Fe-t2g orbital reconstruction, as well as spin transferring and rearrangement.