P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes

1993/01/01 by Shuji Nakamura, Masayuki Senoh Masayuki Senoh, Masayuki Senoh +2 · 11 citations
Physics and Astronomy · Engineering · Materials Science · #GaN-based semiconductor devices and materials #Metal and Thin Film Mechanics #Ga2O3 and related materials

paper · doi:10.1143/jjap.32.l8

Abstract

P-GaN/n-InGaN/n-GaN double-heterostructure (DH) blue-light-emitting diodes (LEDs) were fabricated successfully for the first time. The output power was 125 µW and the external quantum efficiency was as high as 0.22% at a forward current of 20 mA at room temperature. The peak wavelength and the full width at half-maximum (FWHM) of the electroluminescence (EL) were 440 nm and 180 meV, respectively. This value FWHM of was the smallest ever reported for blue GaN LEDs.

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