Temperature Dependence of Band Gap Change in InN and AlN

1994/05/01 by Qixin Guo Qixin Guo, Qixin Guo, Akira Yoshida +1 · 182 citations
Chemistry · Engineering · Physics and Astronomy · #Acoustic Wave Resonator Technologies #Analytical Chemistry (journal) #Atmospheric temperature range #Band gap #Chemistry #Condensed matter physics #Epitaxy #GaN-based semiconductor devices and materials #Materials science #Nanotechnology #Nitride #Optoelectronics #Physics #Semiconductor #Semiconductor Quantum Structures and Devices #Spectral line #Thermodynamics

paper · doi:10.1143/jjap.33.2453

published in Japanese Journal of Applied Physics 33(5R), 2453 (Institute of Physics)

openalex publication_date 1994/05/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/26

Abstract

The optical band gap of InN and AlN single crystal films was measured through absorption spectra in the temperature range of 4.2 to 300 K. The samples were grown on (0001)α-Al 2 O 3 substrates by metalorganic vapor phase epitaxy. The Varshni equation and the Bose-Einstein expression have been compared with the experimental results. The nitride III-V compound semiconductors have smaller temperature dependence of band gap change. In III-V compound semiconductors, the variation of the band gap change increases in the order of N, P and As.

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