Evolution of the electronic structure with size in II-VI semiconductor nanocrystals

2003/12/30 by Sameer Sapra, D. D. Sarma
Engineering · Materials Science · Physics and Astronomy · #Chalcogenide Semiconductor Thin Films #Materials science #Nanocrystal #Nanotechnology #Optoelectronics #Quantum Dots Synthesis And Properties #Semiconductor #ZnO doping and properties #cond-mat.mtrl-sci

paper · pdf · doi:10.1103/physrevb.69.125304

17 pages, 4 figures, accepted in Phys. Rev. B

arxiv created 2003/12/30 · openalex publication_date 2004/03/08 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

In order to provide a quantitatively accurate description of the band-gap variation with sizes in various II-VI semiconductor nanocrystals, we make use of the recently reported tight-binding parametrization of the corresponding bulk systems. Using the same tight-binding scheme and parameters, we calculate the electronic structure of II-VI nanocrystals in real space with sizes ranging between 5 and 80\mathrm\AA in diameter. A comparison with available experimental results from the literature shows an excellent agreement over the entire range of sizes.

Citations

• Realistic tight-binding model for the electronic structure of II-VI semiconductors
• Exciton states and optical properties of CdSe nanocrystals
• Low-dimensional systems: quantum size effects and electronic properties of semiconductor microcrystallites (zero-dimensional systems) and some quasi-two-dimensional systems
• An accurate description of quantum size effects in InP nanocrystallites over a wide range of sizes