An accurate description of quantum size effects in InP nanocrystallites over a wide range of sizes

2003/06/19 by Sameer Sapra, Ranjani Viswanatha, D. D. Sarma +1
Engineering · Materials Science · Physics and Astronomy · #Nanowire Synthesis and Applications #Semiconductor Quantum Structures and Devices #Silicon Nanostructures and Photoluminescence #cond-mat.mtrl-sci

paper · pdf · doi:10.1088/0022-3727/36/13/325

published as J. Phys. D: Appl. Phys. 36, 1595 (2003) · 9 pages, 3 figures, pdf file available at http://sscu.iisc.ernet.in/~sampan/publications.html

openalex publication_date 2003/06/19 · arxiv created 2003/08/03 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/30

Abstract

We obtain an effective parametrization of the bulk electronic structure of InP within the tight-binding scheme. Using these parameters, we calculate the electronic structure of InP clusters with the size ranging up to 7.5 nm. The calculated variations in the electronic structure as a function of the cluster size is found to be in excellent agreement with experimental results over the entire range of sizes, establishing the effectiveness and transferability of the obtained parameter strengths.

Citations

• Realistic tight-binding model for the electronic structure of II-VI semiconductors
• Colloidal Semiconductor Q‐Particles: Chemistry in the Transition Region Between Solid State and Molecules