2003/12/24 by Alain Delgado, Augusto Gonzalez, Augusto González +1
Materials Science · Physics and Astronomy · #Atomic physics #Condensed matter physics #Electron #Excitation #Hamiltonian (control theory) #Physics #Quantum Dots Synthesis And Properties #Quantum and electron transport phenomena #Quantum dot #Quantum mechanics #Raman scattering #Raman spectroscopy #Random phase approximation #Scattering #Semiconductor Quantum Structures and Devices #X-ray Raman scattering #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.69.155314
published as Phys. Rev. B 69, 155314 (2004) · Submitted to Phys. Rev. B
arxiv created 2003/12/24 · openalex publication_date 2004/04/16 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
A consistent semiquantitative theoretical analysis of electronic Raman scattering from many-electron quantum dots under resonance excitation conditions has been performed. The theory is based on random-phase-approximation-like wave functions, with the Coulomb interactions treated exactly, and hole valence-band mixing accounted for within the Kohn-Luttinger Hamiltonian framework. The widths of intermediate and final states in the scattering process, although treated phenomenologically, play a significant role in the calculations, particularly for well-above-band-gap excitation. The calculated polarized and unpolarized Raman spectra reveal a great complexity of features and details when the incident light energy is swept from below, through, and above the quantum dot band gap. Incoming and outgoing resonances dramatically modify the Raman intensities of the single-particle, charge-density, and spin-density excitations. The theoretical results are presented in detail and discussed with regard to experimental observations.