2003/11/12 by Zeno Gaburro, Z. Gaburro, Claudio J. Oton +3 · 1 citation
Engineering · Materials Science · Physics and Astronomy · #Nanowire Synthesis and Applications #Semiconductor materials and devices #Silicon Nanostructures and Photoluminescence #cond-mat.mtrl-sci
paper · pdf · doi:10.1063/1.1757025
3 pages, 3 figures, requires SIunits package
arxiv created 2003/11/12 · openalex publication_date 2004/05/14 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
The electrical conductance of porous silicon fabricated with heavily doped p-type silicon is very sensitive to NO2. We show that the sign of the injection variations depends on the porous layer thickness. If the thickness is sufficiently low—of the order of few μm—the injection decreases instead of increasing. We discuss the effect in terms of an already proposed twofold action of NO2, according to which the free carrier density increases, and simultaneously the energy bands are bent at the porous silicon surface.