Electrolytic Shaping of Germanium and Silicon

1956/03/01 by A. Uhlir · 7 citations
Engineering · Materials Science · Physics and Astronomy · #Integrated Circuits and Semiconductor Failure Analysis #Semiconductor materials and interfaces #Silicon Nanostructures and Photoluminescence

paper · doi:10.1002/j.1538-7305.1956.tb02385.x

crossref issued 1956/03/01 · crossref published 1956/03/01 · crossref published-print 1956/03/01 · openalex publication_date 1956/03/01 · crossref published-online 2013/07/29 · crossref created 2013/07/29 · crossref deposited 2020/10/14 · openalex created_date 2025/10/10 · crossref indexed 2026/07/30 · openalex updated_date 2026/07/30

Abstract

Properties of electrolyte-semiconductor barriers are described, with emphasis on germanium. The use of these barriers in localizing electrolytic etching is discussed. Other localization techniques are mentioned. Electrolytes for etching germanium and silicon are given.

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