2002/09/24 by K. W. Edmonds, K. Y. Wang, R. P. Campion +5 · 322 citations
Chemistry · Materials Science · Physics and Astronomy · #Analytical Chemistry (journal) #Annealing (glass) #Chemistry #Condensed matter physics #Conductivity #Curie #Curie temperature #Electrical resistivity and conductivity #Electronic and Structural Properties of Oxides #Ferromagnetism #Magnetic and transport properties of perovskites and related materials #Magnetic semiconductor #Materials science #Metallurgy #Optoelectronics #Physical chemistry #Physics #Semiconductor #ZnO doping and properties #cond-mat.mtrl-sci
paper · pdf · doi:10.1063/1.1529079
published in Applied Physics Letters 81(26), 4991-4993 (American Institute of Physics) · 4 pages, submitted to Applied Physics Letters
arxiv created 2002/09/24 · openalex publication_date 2002/12/19 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
We show that by annealing Ga1−xMnxAs thin films at temperatures significantly lower than in previous studies, and monitoring the resistivity during growth, an unprecedented high Curie temperature TC and conductivity can be obtained. TC is unambiguously determined to be 118 K for Mn concentration x=0.05, 140 K for x=0.06, and 120 K for x=0.08. We also identify a clear correlation between TC and the room temperature conductivity. The results indicate that Curie temperatures significantly in excess of the current values are achievable with improvements in growth and post-growth annealing conditions.