2002/09/30 by V. Ya. Kravchenko, Vladimir Ya. Kravchenko, Emmanuel I. Rashba +1 · 1 citation
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Boltzmann constant #Condensed matter physics #Diffusion #Ferromagnetism #Magnetic field #Magnetoresistance #Materials science #Physics #Quantum and electron transport phenomena #Quantum mechanics #Semiconductor #Semiconductor materials and devices #Spin (aerodynamics) #Spin diffusion #Spin valve #Thermodynamics #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.67.121310
5 pages, 2 column REVTeX. Explicit prescription relating the results of the ballistic and diffusive theories of spin injection is added. To this end, some notations are changed. Three references added, typos corrected
arxiv created 2002/11/02 · openalex publication_date 2003/03/31 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
A theory of spin injection across a ballistic semiconductor embedded between two ferromagnetic leads is developed for the Boltzmann regime. Spin injection coefficient \ensuremathγ is suppressed by the Sharvin resistance of the semiconductor rN*=(h/e2)(\ensuremathπ2/SN), where SN is the Fermi-surface cross section. It competes with the diffusion resistances of the ferromagnets rF, and \ensuremathγ is small, \ensuremathγ\ensuremath∼rF/rN*\ensuremath≪1, in the absence of contact barriers. Efficient spin injection can be ensured by contact barriers. Explicit formulas for the junction resistance and the spin-valve effect are presented.