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Backward diode composed of a metallic and semiconducting nanotube

2001/06/04 by Ryo Tamura
Engineering · Materials Science · Physics and Astronomy · #Carbon Nanotubes in Composites #Graphene research and applications #Molecular Junctions and Nanostructures #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevb.64.201404

4 pages, RevTeX, uses epsf.sty

arxiv created 2001/06/04 · openalex publication_date 2001/10/30 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

The conditions necessary for a nanotube junction connecting a metallic and semiconducting nanotube to rectify the current are theoretically investigated. A tight binding model is used for the analysis, which includes the Hartree--Fock approximation and Green's function method. It is found that the junction has a behavior similar to the backward diode if the gate electrode is located nearby and the Fermi level of the semiconducting tube is near the gap. Such a junction would be advantageous since the length required for rectification could be reduced.

Citations