Charged Impurity-Scattering-Limited Low-Temperature Resistivity of Low-Density Silicon Inversion Layers

1998/12/31 by S. Das Sarma, E. H. Hwang · 213 citations
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Atmospheric temperature range #Boltzmann constant #Boltzmann equation #Condensed matter physics #Electrical resistivity and conductivity #Impurity #Materials science #Physics #Quantum and electron transport phenomena #Quantum mechanics #Scattering #Semiconductor materials and devices #Silicon #Thermodynamics #cond-mat.dis-nn

paper · pdf · doi:10.1103/physrevlett.83.164

published in Physical Review Letters 83(1), 164-167 (American Physical Society) · 5 pages, 2 figures, will appear in PRL (12 July, 1999)

arxiv created 1999/06/16 · openalex publication_date 1999/07/05 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

We calculate within the Boltzmann equation approach the charged impurity-scattering-limited low-temperature electronic resistivity of low-density n-type inversion layers in Si MOSFET structures. We find a rather sharp quantum to classical crossover in the transport behavior in the 0--5K temperature range, with the low-density, low-temperature mobility showing a strikingly strong nonmonotonic temperature dependence, which may qualitatively explain the recently observed anomalously strong temperature dependent resistivity in low-density, high-mobility MOSFETs.

Citations

• New Liquid Phase and Metal-Insulator Transition in Si MOSFETs
• Scaling Theory of Localization: Absence of Quantum Diffusion in Two Dimensions

Cited by

• Temperature dependent resistivity of spin-split subbands in GaAs two-dimensional hole systems
• Universal density scaling of disorder-limited low-temperature conductivity in high-mobility two-dimensional systems