1998/07/31 by G. M. Minkov, A. V. Germanenko, S. A. Negachev +3
Materials Science · Mathematics · Physics and Astronomy · #Anomaly (physics) #Condensed matter physics #Electronic and Structural Properties of Oxides #Field (mathematics) #Mathematics #Philosophy #Physics #Pure mathematics #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #Zero (linguistics) #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.59.13139
published as Phys. Rev. B59, 13139 (1999) · 8 double-column pages, REVTeX, 9 eps figures embedded with epsf, published version
openalex publication_date 1999/05/15 · arxiv created 1999/09/21 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
The results of experimental and theoretical studies of zero-bias anomaly (ZBA) in the Pb-oxide-n-InAs tunnel structures in magnetic field up to 6 T are presented. A specific feature of the structures is a coexistence of the two-dimensional (2D) and 3D states at the Fermi energy near the semiconductor surface. The dependence of the measured ZBA amplitude on the strength and orientation of the applied magnetic field is in agreement with the proposed theoretical model. According to this model, electrons tunnel into 2D states, and move diffusively in the 2D layer, whereas the main contribution to the screening comes from 3D electrons.