1997/04/23 by Eugene V. Sukhorukov, E. V. Sukhorukov, Alexander Khaetskii +1 · 1 citation
Physics and Astronomy · #Magnetic properties of thin films #Quantum and electron transport phenomena #Surface and Thin Film Phenomena #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.56.1456
12 pages, LaTeX format, 2 figures (available from the authors), accepted for publication by PRB
arxiv created 1997/04/23 · openalex publication_date 1997/07/15 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
We consider the influence of the electron-electron interaction on the nonlinearity of the current-voltage characteristic of the tunnel junction at low bias (diffusive anomaly) in the presence of the classical magnetic field. We present the theory of a phenomenon which manifests itself in the strong anisotropy of a diffusive anomaly for different orientations of the magnetic field with respect to the interface of the tunnel junction. The nonlinear differential tunneling conductance has a universal magnetic field dependence, so that only the magnetic field component perpendicular to the interface is involved. In particular, when the magnetic field is parallel to the interface, the I-V characteristic does not depend on the value of the magnetic field.