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Tight-Binding Parametrization for Photonic Band Gap Materials

1998/03/31 by Elefterios Lidorikis, E. Lidorikis, M. M. Sigalas +3 · 1 citation
Engineering · Physics and Astronomy · #Photonic Crystals and Applications #Photonic and Optical Devices #Plasmonic and Surface Plasmon Research #cond-mat.dis-nn

paper · pdf · doi:10.1103/physrevlett.81.1405

4 pages, 3 postscript figures, sumbitted to Phys. rev. Lett

arxiv created 1998/03/31 · openalex publication_date 1998/08/17 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

The idea of the linear combination of atomic orbitals method, well known from the study of electrons, is extended to the classical wave case. The Mie resonances of the isolated scatterer in the classical wave case are analogous to the atomic orbitals in the electronic case. The matrix elements of the two-dimensional tight-binding (TB) Hamiltonian are obtained by fitting to ab initio results. The transferability of the TB model is tested by reproducing accurately the band structure of different 2D lattices, with and without defects, and at two different dielectric contrasts.

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