2009/04/30 by Xin-Zhong Yan, Yousef Romiah, C. S. Ting
Materials Science · Physics and Astronomy · #Graphene research and applications #Thermal properties of materials #Topological Materials and Phenomena #cond-mat.str-el
paper · pdf · doi:10.1103/physrevb.80.165423
published as Phys. Rev. B 80, 165423 (2009) · 6 pages, 3 figures
arxiv created 2009/07/20 · openalex publication_date 2009/10/22 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
On the basis of self-consistent Born approximation for Dirac fermions under charged impurity scatterings in graphene, we study the thermoelectric power using the heat current-current correlation function. The advantage of the present approach is its ability to effectively treat the low-doping case where the coherence process involving carriers in both upper and lower bands becomes important. We show that the low-temperature behavior of the thermoelectric power as a function of the carrier concentration and the temperature observed by the experiments can be successfully explained by our calculation.