2007/04/23 by Tomas Löfwander, Tomas Lofwander, M. Fogelström +1 · 2 citations
Materials Science · Physics and Astronomy · #Graphene research and applications #Surface and Thin Film Phenomena #Thermal properties of materials #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.76.193401
published as Physical Review B 76, 193401 (2007) · 5 pages, 3 figures
arxiv created 2007/04/23 · openalex publication_date 2007/11/07 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We present calculations of the thermal and electric linear response in graphene, including disorder in the self-consistent t-matrix approximation. For strong impurity scattering, near the unitary limit, the formation of a band of impurity states near the Fermi level leads to that Mott's relation holds at low temperature. For higher temperatures, there are strong deviations due to the linear density of states. The low-temperature thermopower is proportional to the inverse of the impurity potential and the inverse of the impurity density. Information about impurity scattering in graphene can be extracted from the thermopower, either measured directly or extracted via Mott's relation from the electron-density dependence of the electric conductivity.