2009/05/31 by M. C. Lemme, Max C. Lemme, D. C. Bell +11 · 1 citation
Engineering · Materials Science · Physics and Astronomy · #Carbon Nanotubes in Composites #Graphene research and applications #Nanopore and Nanochannel Transport Studies #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1021/nn900744z
published as ACSNano 3, 2674 (2009)
openalex publication_date 2009/09/22 · arxiv created 2009/10/08 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
We report on the etching of graphene devices with a helium ion beam, including in situ electrical measurement during lithography. The etching process can be used to nanostructure and electrically isolate different regions in a graphene device, as demonstrated by etching a channel in a suspended graphene device with etched gaps down to about 10 nm. Graphene devices on silicon dioxide (SiO(2)) substrates etch with lower He ion doses and are found to have a residual conductivity after etching, which we attribute to contamination by hydrocarbons.