Crystallographic Etching of Few-Layer Graphene

2008/06/21 by Sujit S. Datta, Douglas R. Strachan, Samuel M. Khamis +1 · 3 citations
Engineering · Materials Science · Physics and Astronomy · #Carbon Nanotubes in Composites #Graphene and Nanomaterials Applications #Graphene research and applications #cond-mat.mtrl-sci

paper · pdf · doi:10.1021/nl080583r

published as Nano Letters 8, 1912 (2008)

openalex publication_date 2008/06/21 · arxiv created 2008/06/24 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We demonstrate a method by which few-layer graphene samples can be etched along crystallographic axes by thermally activated metallic nanoparticles. The technique results in long (>1 microm) crystallographic edges etched through to the insulating substrate, making the process potentially useful for atomically precise graphene device fabrication. This advance could enable atomically precise construction of integrated circuits from single graphene sheets with a wide range of technological applications.

Citations

• Peculiar width dependence of the electronic properties of carbon nanoribbons
• Electric Field Effect in Atomically Thin Carbon Films
• Edge state in graphene ribbons: Nanometer size effect and edge shape dependence
• Atomic Structure of Graphene on SiO2

Cited by

• Etching of Graphene Devices with a Helium Ion Beam
• Anisotropic Etching and Nanoribbon Formation in Single-Layer Graphene
• Defect-induced ferromagnetism in fullerenes
• Clar’s Theory, π-Electron Distribution, and Geometry of Graphene Nanoribbons