Tight-binding approach to uniaxial strain in graphene

2008/11/30 by Vitor M. Pereira, A. H. Castro Neto, N. M. R. Peres · 16 citations
Materials Science · Physics and Astronomy · #Anisotropy #Band gap #Condensed matter physics #Dirac fermion #Electron #Electronic structure #Gapless playback #Graphene #Graphene research and applications #Lattice (music) #Materials science #Physics #Quantum and electron transport phenomena #Quantum mechanics #Spectral gap #Tight binding #Topological Materials and Phenomena #cond-mat.mes-hall #cond-mat.mtrl-sci

paper · pdf · doi:10.1103/physrevb.80.045401

published as Phys. Rev. B 80, 045401 (2009) · Expanded version of the original paper

openalex publication_date 2009/07/01 · arxiv created 2009/07/15 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/06

Abstract

We analyze the effect of tensional strain in the electronic structure of graphene. In the absence of electron-electron interactions, within linear elasticity theory, and a tight-binding approach, we observe that strain can generate a bulk spectral gap. However, this gap is critical, requiring threshold deformations in excess of 20% and only along preferred directions with respect to the underlying lattice. The gapless Dirac spectrum is robust for small and moderate deformations and the gap appears as a consequence of the merging of the two inequivalent Dirac points only under considerable deformations of the lattice. We discuss how strain-induced anisotropy and local deformations can be used as a means to affect transport characteristics and pinch off current flow in graphene devices.

Citations

• Evidence of Structural Strain in Epitaxial Graphene Layers on 6H-SiC(0001)
• Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene
• Zero modes of tight-binding electrons on the honeycomb lattice
• Tunable Stress and Controlled Thickness Modification in Graphene by Annealing
• Pseudomagnetic Fields and Ballistic Transport in a Suspended Graphene Sheet
• Electric Field Effect in Atomically Thin Carbon Films
• Impurity Scattering in Carbon Nanotubes – Absence of Back Scattering –
• Strength and Breaking Mechanism of Multiwalled Carbon Nanotubes Under Tensile Load
• The electronic properties of graphene
• Tilted anisotropic Dirac cones in quinoid-type graphene andα−(BEDT-TTF)2I3

Cited by

• Planar Nernst effect from hidden band geometry in layered two-dimensional materials
• Large nonlinear Hall effect in strained moiré structures hosting high-pseudospin fermions
• Friedel oscillations at the Dirac cone merging point in anisotropic graphene and graphenelike materials
• In Situ Strain Tuning in hBN-Encapsulated Graphene Electronic Devices
• Schrödinger-type 2D coherent states of magnetized uniaxially strained graphene
• Strain Modulated Superlattices in Graphene
• Non-Abelian Dirac node braiding and near-degeneracy of correlated phases at odd integer filling in magic-angle twisted bilayer graphene
• Intrinsic Charge Carrier Mobility in Single-Layer Black Phosphorus
• Tuning the electronic structure and magnetic coupling in armchair B2S nanoribbons using strain and staggered sublattice potential
• Semi-Dirac point in the Hofstadter spectrum
• Spectral butterfly and electronic localization in rippled-graphene nanoribbons: Mapping onto effective one-dimensional chains
• Dynamical gap generation in a two-dimensional Dirac semimetal with a deformed Dirac cone
• Engineering a two-dimensional kagome topological insulator from porous graphene
• Pseudomagnetic fields and strain engineering: graphene on GaN nanowires
• Two-dimensional topological semimetals protected by symmorphic symmetries
• Electronic topological transition in sliding bilayer graphene

Related

• Effects of Strain on Electronic Properties of Graphene
• Possible strain-induced directional superconductivity in graphene
• Band Gap of Strained Graphene Nanoribbons
• Energy gaps, topological insulator state and zero-field quantum Hall effect in graphene by strain engineering
• Graphene Straintronics by Molecular Trapping