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Possible strain-induced directional superconductivity in graphene

2011/08/15 by Bumned Soodchomshom, Soodchomshom, Bumned
Engineering · Materials Science · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Graphene research and applications #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Superconductivity (cond-mat.supr-con) #Surface and Thin Film Phenomena

paper · pdf · doi:10.48550/arxiv.1108.2931

openalex publication_date 2011/08/15 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Applying large strain in zigzag direction, gapless graphene may turns into gapped graphene at the critical strain. The energy gap between valence and conduction bands is created above the critical deformation. We theoretically predict that, using the Landauer formalism to study conductance in ballistic limit, the strain dependence of ballistic conductance, related to tight-binding-based carriers, evolves into a tremendously large conductance at the critical strain, found only for the conductance of current along armchair direction. This directional superconductance may lead graphene to resemble a superconductor. The strain-induced energy gap plays the role of the superconducting gap. This behavior is due to the fact that strain-induced change of electronic properties leads to highly anisotropic fermions to cause this tremendously large conductance.

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