2008/09/30 by M. Q. Weng, Y. Y. Wang, M. W. Wu · 17 citations
Physics and Astronomy · #Atomic physics #Condensed matter physics #Electron #GaN-based semiconductor devices and materials #Hyperfine structure #Perturbation theory (quantum mechanics) #Phonon #Physics #Quantum and electron transport phenomena #Quantum dot #Quantum mechanics #Relaxation (psychology) #Scattering #Semiconductor Quantum Structures and Devices #Spin (aerodynamics) #Spin–orbit interaction #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.79.155309
published in Physical Review B 79(15) (American Physical Society) · 8 pages, 5 figures, PRB 79, 2009, in press
arxiv created 2009/03/23 · openalex publication_date 2009/04/10 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
The spin relaxation-time T1 in zinc-blende GaN quantum dot is investigated for different magnetic field, well width, and quantum dot diameter. The spin relaxation caused by the two most important spin-relaxation mechanisms in zinc-blende semiconductor quantum dots, i.e., the electron-phonon scattering in conjunction with the Dresselhaus spin-orbit coupling and the second-order process of the hyperfine interaction combined with the electron-phonon scattering, are systematically studied. The relative importance of the two mechanisms are compared in detail under different conditions. It is found that due to the small spin-orbit coupling in GaN, the spin relaxation caused by the second-order process of the hyperfine interaction combined with the electron-phonon scattering plays much more important role than it does in the quantum dot with narrower band gap and larger spin-orbit coupling, such as GaAs and InAs.