2007/11/30 by Y. Osafune, G. S. Song, J. I. Hwang +9
Materials Science · Physics and Astronomy · #Magnetic properties of thin films #Semiconductor materials and interfaces #ZnO doping and properties #cond-mat.mtrl-sci #cond-mat.str-el
paper · pdf · doi:10.1063/1.2931040
published as J. Appl. Phys. 103, 103717 (2008) · 5 pages, 4 figures
openalex publication_date 2008/05/15 · arxiv created 2008/06/08 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
We have performed a depth profile study of thermally diffused Mn/GaAs (001) interfaces using photoemission spectroscopy combined with Ar+-ion sputtering. We found that Mn ion was thermally diffused into the deep region of the GaAs substrate and completely reacted with GaAs. In the deep region, the Mn 2p core-level and Mn 3d valence-band spectra of the Mn/GaAs (001) sample heated to 600 °C were similar to those of Ga1−xMnxAs, zinc-blend-type MnAs dots, and/or interstitial Mn in tetrahedrally coordinated by As atoms, suggesting that the Mn atoms do not form any metallic compounds but are tetrahedrally coordinated by ligand atoms, and Mn 3d states are hybridized with ligand orbitals lized but were hybridized with the electronic states of the host GaAs. Ferromagnetism was observed in the dilute Mn phase.