2003/04/11 by Y. Ishida, D. D. Sarma, K. Okazaki +12 · 1 citation
Engineering · Materials Science · Physics and Astronomy · #Chalcogenide Semiconductor Thin Films #Copper-based nanomaterials and applications #ZnO doping and properties #cond-mat.mtrl-sci #cond-mat.str-el
paper · pdf · doi:10.1103/physrevlett.91.107202
published as Phys. Rev. Lett. 91, 107202 (2003) · 4 pages, 5 figures
arxiv created 2003/04/11 · openalex publication_date 2003/09/05 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
The chemical states of the ZnGeP2\ensuremath\mathbin:Mn interface which shows ferromagnetism above room temperature have been studied by photoemission spectroscopy. Mn deposition on the ZnGeP2 substrate heated to 400 \ifmmode^∘\else\textdegree\fiC induced Mn substitution for Zn and then the formation of metallic Mn-Ge-P compounds. Depth profile studies have shown that Mn 3d electrons changed their character from itinerant to localized along the depth, and in the deep region, dilute divalent Mn species (<5% Mn) was observed with a coexisting metallic Fermi edge of non-Mn 3d character. The possibility of hole doping through Mn substitution for Ge and/or Zn vacancy is discussed.