2006/08/28 by François Léonard, Francois Leonard, Derek A Stewart · 39 citations
Materials Science · Physics and Astronomy · #Ballistic conduction #Ballistic conduction in single-walled carbon nanotubes #Carbon Nanotubes in Composites #Carbon nanotube #Carbon nanotube quantum dot #Graphene research and applications #Mechanical and Optical Resonators #Ohmic contact #Quantum tunnelling #Schottky barrier #Schottky diode #Transistor #cond-mat.other
paper · pdf · doi:10.1088/0957-4484/17/18/029
published in Nanotechnology 17(18), 4699-4705 (IOP Publishing) · Nanotechnology, in press
arxiv created 2006/08/28 · openalex publication_date 2006/08/30 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We present self-consistent, non-equilibrium Green's function calculations of the characteristics of short channel carbon nanotube transistors, focusing on the regime of ballistic transport with ohmic contacts. We first establish that the band line-up at the contacts is renormalized by charge transfer, leading to Schottky contacts for small diameter nanotubes and ohmic contacts for large diameter nanotubes, in agreement with recent experiments. For short channel ohmic contact devices, source-drain tunnelling and drain-induced barrier lowering significantly impact the current-voltage characteristics. Furthermore, the ON state conductance shows a temperature dependence, even in the absence of phonon scattering or Schottky barriers. This last result also agrees with recently reported experimental measurements.