2004/01/28 by B. M. Kim, Todd Brintlinger, T. Brintlinger +11 · 80 citations
Chemistry · Materials Science · Physics and Astronomy · #Capacitance #Carbon Nanotubes in Composites #Carbon nanotube #Carbon nanotube field-effect transistor #Carbon nanotube quantum dot #Chemical vapor deposition #Chemistry #Dielectric #Electrical engineering #Electrode #Field-effect transistor #Force Microscopy Techniques and Applications #Gate dielectric #Graphene research and applications #Materials science #Nanotechnology #Nanotube #Optical properties of carbon nanotubes #Optoelectronics #Potential applications of carbon nanotubes #Schottky barrier #Transconductance #Transistor #Voltage #cond-mat.mes-hall
paper · pdf · doi:10.1063/1.1682691
published in Applied Physics Letters 84(11), 1946-1948 (American Institute of Physics) · 13 pages, 1 table, 3 figures, to appear in Appl. Phys. Lett
arxiv created 2004/01/28 · openalex publication_date 2004/03/08 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
Single-walled carbon nanotubes (SWNTs) have been grown via chemical vapor deposition on high-κ dielectric SrTiO3/Si substrates, and high-performance semiconducting SWNT field-effect transistors have been fabricated using the thin SrTiO3 as gate dielectric and Si as gate electrode. The transconductance per channel width is 8900 μS/μm. The high transconductance cannot be explained by the increased gate capacitance; it is proposed that the increased electric field at the nanotube–electrode interface due to the high-κ SrTiO3 decreases or eliminates the nanotube-electrode Schottky barrier.