2007/12/11 by M. J. Calderon, M. J. Calderón, Belita Koiller +1 · 1 citation
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Quantum and electron transport phenomena #Semiconductor materials and devices #cond-mat.mes-hall #quant-ph
paper · pdf · doi:10.1103/physrevb.77.155302
published as Phys. Rev. B 77, 155302 (2008) · 7 pages, 5 figures
arxiv created 2007/12/11 · openalex publication_date 2008/04/02 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
We analyze the effects of valley interference on the quantum control and manipulation of an electron bound to a donor close to a Si∕SiO2 interface as a function of the valley-orbit coupling at the interface. We find that, for finite valley-orbit coupling, the tunneling times involved in shuttling the electron between the donor and the interface oscillate with the donor-interface distance in much the same way as the exchange coupling oscillates with the interdonor distance. These oscillations disappear when the ground state at the interface is degenerate (corresponding to zero valley-orbit coupling).