Nanoscale field effect transistor for biomolecular signal amplification

2007/12/10 by Yu Chen, Xihua Wang, Mi K. Hong +4 · 1 citation
Chemical Engineering · Engineering · Physics and Astronomy · #Analytical Chemistry and Sensors #Molecular Junctions and Nanostructures #Nanowire Synthesis and Applications #cond-mat.mtrl-sci #cond-mat.other #physics.bio-ph #physics.chem-ph

paper · pdf · doi:10.1063/1.2822445

published as APPLIED PHYSICS LETTERS 91, 243511 (2007) · 4 pages, 3 figures, two-column format. Related papers can be found at http://nano.bu.edu

openalex publication_date 2007/12/10 · arxiv created 2008/02/13 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We report amplification of biomolecular recognition signal in lithographically defined silicon nanochannel devices. The devices are configured as field effect transistors (FET) in the reversed source-drain bias region. The measurement of the differential conductance of the nanowire channels in the FET allows sensitive detection of changes in the surface potential due to biomolecular binding. Narrower silicon channels demonstrate higher sensitivity to binding due to increased surface-to-volume ratio. The operation of the device in the negative source-drain region demonstrates signal amplification. The equivalence between protein binding and change in the surface potential is described.

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