2010/03/11 by Drew C. Forman, Florian Wieberger, André H. Gröschel +3 · 1 citation
Engineering · Materials Science · #Advancements in Photolithography Techniques #Electron and X-Ray Spectroscopy Techniques #Advanced Surface Polishing Techniques
paper · doi:10.1117/12.848344
openalex publication_date 2010/03/11 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/30
Linear and star-shaped ArF photoresists were prepared and preliminary lithographic comparison was performed using electron-beam exposure. An oligo-initiator based on saccharose forms the core of the star shaped photoresist from which three standard ArF photoresist monomers, α-gamma butyrolactone methacrylate (GBLMA), methyl adamantyl methacrylate (MAMA) and hydroxyl adamantyl methacrylate (HAMA) were polymerized. Conditions were adjusted to obtain a low polydispersity, 6 kg/mol star polymer with a degree of polymerization of approximately five mers per arm. For comparison, a linear photoresist control was prepared using the same scheme. The star resist architecture was found to improve roughness without reducing sensitivity or resolution.